HAT2096H
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I
D
= 2 A, 5 A, 10 A
V
GS
= 4.5 V
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
100
30
10
3
1
0.3
0.1
0.1
Tc = –25°C
75°C
12
25°C
8
4
10 V
0
–40
0
40
2 A, 5 A, 10 A
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
100
80
120
160
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
Coss
300
Crss
100
30
10
Ciss
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
500
200
100
50
20
10
0.1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Capacitance C (pF)
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 40 A
V
GS
V
DD
= 25 V
10 V
5V
16
Switching Characteristics
V
GS
(V)
20
200
100
50
tr
20
10
5
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7
Ω,
duty
≤
1 %
2
0.1 0.2
0.5
1
2
5
10
20
td(on)
tf
td(off)
50
40
Drain to Source Voltage
30
V
DS
12
20
8
10
0
0
20
V
DD
= 25 V
10 V
5V
40
60
80
4
0
100
Gate Charge
Qg (nc)
Gate to Source Voltage
Switching Time t (ns)
Drain Current
I
D
(A)
Rev.4.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
