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HAT2096H-EL-E 参数 Datasheet PDF下载

HAT2096H-EL-E图片预览
型号: HAT2096H-EL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N通道功率MOS FET电源开关 [Silicon N Channel Power MOS FET Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关
文件页数/大小: 7 页 / 85 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HAT2096H
Main Characteristics
Power vs. Temperature Derating
40
500
100
10
Maximum Safe Operation Area
Pch (W)
10
0
µ
s
I
D
(A)
µ
s
30
Channel Dissipation
10
20
Drain Current
1
Op
0
era
ms
tio
n
Operation in
this area is
limited by R
DS (on)
DC
PW
=1
1m
s
10
0.1
Tc = 25°C
1 shot Pulse
0
0
50
100
150
200
0.01
0.1
0.3
1
3
10
30
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
10 V
4.5 V
50
3.5 V
Pulse Test
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
(A)
(A)
I
D
3V
40
40
I
D
30
30
Drain Current
20
Drain Current
20
25°C
Tc = 75°C
10
–25°C
0
10
V
GS
= 2.5 V
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS (on)
(V)
Pulse Test
0.16
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
Pulse Test
50
0.20
Drain to Source Voltage
0.12
20
10
5
10 V
2
1
0.1 0.2 0.5 1
V
GS
= 4.5 V
0.08
I
D
= 10 A
5A
2A
0
0
4
8
12
16
20
0.04
2
5 10 20
50 100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.4.00 Sep 07, 2005 page 3 of 6