HAT2096H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Tc = 25
°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
30
±20
40
160
40
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Pch
Tch
Note 2
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
3. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
30
±20
—
—
1.0
—
—
30
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
4.2
7.0
50
2200
600
330
40
7
8
20
49
62
15
0.85
60
Max
—
—
±10
1
2.5
5.3
10
—
—
—
—
—
—
—
—
—
—
—
1.11
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
GS
= 10 V
Note 3
I
D
= 20 A, V
GS
= 4.5 V
I
D
= 20 A, V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 10 V
I
D
= 40 A
V
GS
= 10 V, I
D
= 20 A
V
DD
≅
10 V
R
L
= 0.5
Ω
Rg = 4.7
Ω
I
F
= 40 A, V
GS
= 0
I
F
= 40 A, V
GS
= 0
di
F
/dt = 50 A/µs
Note 3
Note 3
Note 3
Rev.4.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
