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HAT1036R 参数 Datasheet PDF下载

HAT1036R图片预览
型号: HAT1036R
PDF下载: 下载PDF文件 查看货源
内容描述: 硅P沟道功率MOS FET电源开关 [Silicon P Channel Power MOS FET Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关光电二极管
文件页数/大小: 7 页 / 88 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HAT1036R
Reverse Drain Current vs.
Source to Drain Voltage
50
Reverse Drain Current I
DR
(A)
40
10 V
V
GS
=
0
30
5 V
20
10
Pulse Test
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage
V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
θch
– f (t) =
γ
s (t) •
θch
– f
θch
– f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
P
DM
D=
PW
T
1m
10 m
100 m
1
10
100
1000
10000
PW
T
0.01
0.02
0.01
0.001
1sh
p
ot
uls
e
0.0001
10
µ
100
µ
Pulse Width PW (S)
Switching Time Test Circuit
Vin
Vin Monitor
D.U.T.
R
L
Vout
Monitor
Switching Time Waveform
10%
90%
90%
90%
Vin
–4 V
50
V
DD
= –10 V
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.7.00 Sep 07, 2005 page 5 of 6