HAT1036R
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
50
Pulse Test
40
I
D
= –2 A, –5 A, –10 A
30
V
GS
= –4 V
20
100
30
10
3
1
0.3
0.1
–0.1 –0.3
25°C
Tc = –25°C
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
75°C
10
–10 V
0
–40
0
40
–2 A, –5 A, –10 A
V
DS
= –10 V
Pulse Test
–1
–3
–10
–30
–100
80
120
160
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
3000
1000
300
100
30
10
Coss
Body-Drain Diode Reverse
Recovery Time
100
Reverse Recovery Time trr (ns)
50
Capacitance C (pF)
Crss
20
di / dt = 20 A /
µs
V
GS
= 0, Ta = 25°C
10
–0.1 –0.2 –0.5 –1
–2
–5 –10 –20
V
GS
= 0
f = 1 MHz
0
–10
–20
–30
–40
–50
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –5 V
–10 V
–25 V
V
GS
V
DS
V
DD
= –25 V
–10 V
–5 V
Switching Characteristics
V
GS
(V)
0
1000
500
tr
0
–10
–4
Drain to Source Voltage
Switching Time t (ns)
Gate to Source Voltage
–20
–8
200
100
50
td(on)
td(off)
tf
–30
–12
–40
I
D
= –12 A
0
40
80
120
160
–16
–50
–20
200
20 V = –4 V, V = –10 V
GS
DS
Rg = 50
Ω,
duty
≤
1 %
10
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.7.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
