HAT1036R
Main Characteristics
Power vs. Temperature Derating
4.0
Maximum Safe Operation Area
–500
10
µs
100
µs
–100
s
=1
DC
0m
Op
era
s
tion
(PW
N
–1 Operation in
≤
1
ote 4
this area is
0s
)
limited by R
DS (on)
–0.1
Ta = 25°C
1 shot pulse
–0.01
–0.1 –0.3
–1
–3
–10 –30
PW
Pch (W)
3.0
I
D
(A)
Test Condition:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm), PW
≤
10 s
Channel Dissipation
–10
1m
2.0
1.0
0
0
50
100
150
200
Drain Current
–100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 4:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Typical Output Characteristics
–50
–10 V
–5 V
Pulse Test
–30
–3.5 V
–50
–4 V
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
I
D
(A)
Drain Current
I
D
(A)
–40
–40
–30
Drain Current
–20
–20
–10
V
GS
= –3 V
–10
Tc = 75°C
25°C
–25°C
–3
–4
–5
0
0
–2
–4
–6
–8
–10
0
0
–1
–2
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
Pulse Test
50
V
GS
= –4 V
20
10
–10 V
5
Drain to Source Saturation Voltage
V
DS (on)
(V)
–0.5
–0.4
–0.3
–0.2
I
D
= –10 A
–0.1
–5 A
–2 A
0
0
–4
–8
–12
–16
–20
2
1
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20 –50 –100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.7.00 Sep 07, 2005 page 3 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
