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HAT1025R-EL-E 参数 Datasheet PDF下载

HAT1025R-EL-E图片预览
型号: HAT1025R-EL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 硅P沟道功率MOS FET高速电源开关 [Silicon P Channel Power MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关光电二极管
文件页数/大小: 8 页 / 97 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HAT1025R
Switching Characteristics
500
Switching Time t (ns)
200
100
50
td(off)
tf
tr
td(on)
20
10 V = –4 V, V = –10 V
GS
DD
PW = 3
µs,
duty
1 %
5
–2
–5
–0.2 –0.5 –1
–10
–20
Drain Current
Normalized Transient Thermal Impedance
γ
s (t)
10
I
D
(A)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
1
D=1
0.5
0.1
0.2
0.1
0.05
θch
– f (t) =
γ
s (t) •
θch
– f
θch
– f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
lse
0.01
0.02
0.01
P
DM
PW
T
1m
10 m
100 m
1
10
100
D=
0.001
1s
ho
PW
T
u
tp
0.0001
10
µ
100
µ
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D=1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
θch
– f (t) =
γ
s (t) •
θch
– f
θch
– f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
P
DM
D=
PW
T
1m
10 m
100 m
1
10
100
1000
10000
e
0.01
0.001
1s
tp
ho
uls
PW
T
0.0001
10
µ
100
µ
Pulse Width PW (S)
Rev.10.00 Sep 07, 2005 page 5 of 7