HAT1025R
Main Characteristics
Power vs. Temperature Derating
4.0
Maximum Safe Operation Area
–100
–30
10
µs
Pch (W)
I
D
(A)
Test Condition:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm), PW
≤
10 s
100
µs
3.0
–10
–3
–1
–0.3
–0.1
Channel Dissipation
2.0
1
Dr
ive
1.0
Op
er
Drain Current
10
Op
era
ms
tio
n(
PW
Not
Operation in
≤
1
e5
this area is
0s
)
limited by R
DS (on)
DC
PW
1m
=
s
2
Dr
ive
Op
at
at
er
ion
ion
0
0
50
100
150
200
Ta = 25°C
–0.03 1 shot pulse
1 Drive Operation
–0.01
–1
–3
–0.1 –0.3
–10
–30
–100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 5:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Typical Output Characteristics
–20
–10 V
–20
–3.5 V
Typical Transfer Characteristics
I
D
(A)
I
D
(A)
–16
–5 V
–4 V
Tc = –25°C
–16
25°C
75°C
Pulse Test
–3 V
–12
–12
Drain Current
–8
Drain Current
–2.5 V
–2 V
V
GS
= –1.5 V
–8
–4
–4
V
DS
= –10 V
Pulse Test
0
0
–1
–2
–3
–4
–5
0
0
–2
–4
–6
–8
–10
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
V
DS (on)
(V)
–0.5
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
–0.4
0.2
V
GS
= –2.5 V
0.1
0.05
–4 V
–0.3
–0.2
I
D
= –2 A
–0.1
–1 A
–0.5 A
0.02
0.01
–0.2
0
0
–2
–4
–6
–8
–10
–0.5
–1
–2
–5
–10
–20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.10.00 Sep 07, 2005 page 3 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
