HAT1025R
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
0.20
20
10
5
25°C
2
1
0.5
V
DS
= –10 V
Pulse Test
0.2
–0.2
–0.5
–1
–2
–5
–10 –20
75°C
Tc = –25°C
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance vs.
Drain Current
0.16
–1 A, –0.5 A
I
D
= –2 A
0.12
V
GS
= –2.5 V
0.08
–2 A, –1 A, –0.5 A
0.04
–4 V
0
–40
0
40
80
120
160
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
Crss
100
30
10
Ciss
Coss
Body-Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
100
50
20
10
5
–0.2
di / dt = 20 A /
µs
V
GS
= 0, Ta = 25°C
–0.5
–1
–2
–5
–10
–20
Capacitance C (pF)
200
V
GS
= 0
f = 1 MHz
0
–4
–8
–12
–16
–20
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
0
–20
Dynamic Input Characteristics
V
DS
(V)
0
V
DD
= –5 V
–10 V
–20 V
V
GS
–20
V
DS
V
DD
= –20 V
–10 V
–5 V
–4
–10
–2
Reverse Drain Current I
DR
(A)
–16
V
GS
=
–
5 V
Drain to Source Voltage
Gate to Source Voltage
–12
0, 5 V
–30
–6
–8
–40
I
D
= –4.5 A
0
4
8
12
16
–8
–4
Pulse Test
–50
–10
20
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Gate Charge
Qg (nc)
Source to Drain Voltage
V
SD
(V)
Rev.10.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
