欢迎访问ic37.com |
会员登录 免费注册
发布采购

GRM155B31H103KA88 参数 Datasheet PDF下载

GRM155B31H103KA88图片预览
型号: GRM155B31H103KA88
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管的低噪声,高增益 [NPN SiGe RF Transistor for Low Noise, High-Gain]
分类和应用: 晶体晶体管
文件页数/大小: 16 页 / 176 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号GRM155B31H103KA88的Datasheet PDF文件第8页浏览型号GRM155B31H103KA88的Datasheet PDF文件第9页浏览型号GRM155B31H103KA88的Datasheet PDF文件第10页浏览型号GRM155B31H103KA88的Datasheet PDF文件第11页浏览型号GRM155B31H103KA88的Datasheet PDF文件第12页浏览型号GRM155B31H103KA88的Datasheet PDF文件第14页浏览型号GRM155B31H103KA88的Datasheet PDF文件第15页浏览型号GRM155B31H103KA88的Datasheet PDF文件第16页  
NESG3033M14  
<R>  
EXAMPLE OF CHARACTERISTICS FOR 1.575 GHz LNA EVALUATION BOARD  
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3 V, IC = 6.1 mA, f = 1.575 GHz)  
Parameter  
Symbol  
NF  
Value  
0.72  
17.3  
10.3  
14.2  
0.3  
0.7  
Unit  
dB  
Noise Figure  
Gain  
Ga  
dB  
Input Return Loss  
RLin  
dB  
Output Return Loss  
RLout  
PO (1 dB)  
IIP3  
dB  
Gain 1 dB Compression Output Power  
Input 3rd Order Distortion Interception Point  
dBm  
dBm  
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
OUTPUT POWER, COLLECTOR  
CURRENT vs. INPUT POWER  
OUTPUT POWER, IM vs. INPUT POWER  
3
40  
20  
0
15  
10  
5
25  
20  
15  
10  
5
V
CC = 3 V, I = 6.1 mA  
C
V
CC = 3 V, f = 1.575 GHz  
Note  
f1in = 1.575 GHz,  
f2in = 1.576 GHz  
I
cq = 6.1 mA (RF OFF)  
P
OUT  
Pout  
20  
40  
60  
80  
0
I
C
IM  
3
–5  
IIP3 = 0.7 dBm  
–10  
–25  
0
5
30  
20  
Input Power Pin (dBm)  
10  
0
10  
–20  
–15  
–10  
–5  
0
Input Power Pin (dBm)  
Note A current increase is seen because the ESD protection element is turned on.  
However, there is no influence of deterioration etc. on reliability.  
Remark The graph indicates nominal characteristics.  
R09DS0049EJ0300 Rev.3.00  
Sep 14, 2012  
Page 13 of 14  
 复制成功!