MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–40
–32
–24
–16
–8
Tch = 25°C
ID = –8A
VGS = 0V
Pulse Test
VDS =
–25V
Tc = 25°C
75°C
–20V
–10V
125°C
0
0
20
40
60
80
100
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–2.0
–1.6
–1.2
–0.8
–0.4
0
VGS = –10V
ID = –8A
Pulse Test
VDS = –10V
ID = –1mA
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 0V
ID = –1mA
5
D = 1.0
3
0.5
2
101
7
0.2
5
0.1
3
0.05
2
PDM
100
7
5
tw
0.02
0.01
Single Pulse
3
T
2
tw
D=
10–1
T
7
5
3
2
10–2
10–4
23 57 –3 23 57 –223 57 –123 57100 23 57 1 23 57 2 23 57103
10
10
10
10
10
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Sep.1998
RENESAS [ RENESAS TECHNOLOGY CORP ]
