MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
32
24
16
8
–2.0
–1.6
–1.2
–0.8
–0.4
0
VGS = –4V
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
–10V
ID = –32A
–24A
–16A
–8A
0
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–40
–32
–24
–16
–8
102
7
5
Tc =25°C 75°C 125°C
Tc = 25°C
VDS = –10V
Pulse Test
3
2
101
7
5
VDS = –10V
Pulse Test
3
2
0
100
0
–2
–4
–6
–8
–10
–5 –7–100
–2 –3 –5 –7–101
–2 –3 –5
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
2
Tch = 25°C
VDD = –15V
VGS = –10V
Tch = 25°C
VGS = 0V
f = 1MHZ
104
5
td(off)
RGEN = RGS = 50Ω
7
5
3
2
Ciss
3
2
tf
tr
102
7
103
5
Coss
Crss
7
5
3
2
td(on)
3
2
101
–5–7–10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
RENESAS [ RENESAS TECHNOLOGY CORP ]
