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FY8ABJ-03 参数 Datasheet PDF下载

FY8ABJ-03图片预览
型号: FY8ABJ-03
PDF下载: 下载PDF文件 查看货源
内容描述: 三菱P沟道功率MOSFET的高速开关使用 [MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲光电二极管
文件页数/大小: 5 页 / 172 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号FY8ABJ-03的Datasheet PDF文件第1页浏览型号FY8ABJ-03的Datasheet PDF文件第2页浏览型号FY8ABJ-03的Datasheet PDF文件第4页浏览型号FY8ABJ-03的Datasheet PDF文件第5页  
MITSUBISHI Pch POWER MOSFET  
FY8ABJ-03  
HIGH-SPEED SWITCHING USE  
ELECTRICAL CHARACTERISTICS (Tch = 25°C)  
Symbol Parameter  
Limits  
Unit  
Test conditions  
Min.  
–30  
Typ.  
Max.  
ID = –1mA, VGS = 0V  
V
(BR) DSS Drain-source breakdown voltage  
V
µA  
mA  
V
VGS = ±20V, VDS = 0V  
VDS = –30V, VGS = 0V  
ID = –1mA, VDS = –10V  
ID = –8A, VGS = –10V  
ID = –4A, VGS = –4V  
ID = –8A, VGS = –10V  
ID = –8A, VDS = –10V  
IGSS  
IDSS  
Gate-source leakage current  
Drain-source leakage current  
Gate-source threshold voltage  
Drain-source on-state resistance  
Drain-source on-state resistance  
Drain-source on-state voltage  
Forward transfer admittance  
Input capacitance  
±0.1  
–0.1  
–2.5  
20  
VGS (th)  
rDS (ON)  
rDS (ON)  
VDS (ON)  
yfs  
–1.5  
–2.0  
14  
mΩ  
mΩ  
V
26  
37  
0.112  
19  
0.160  
S
Ciss  
3650  
900  
385  
30  
pF  
pF  
pF  
ns  
VDS = –10V, VGS = 0V, f = 1MHz  
Coss  
Crss  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
td (on)  
tr  
Rise time  
55  
ns  
VDD = –15V, ID = –4A, VGS = –10V, RGE
td (off)  
tf  
Turn-off delay time  
50  
0.77  
ns  
Fall time  
ns  
IS = –2.1A, VGS = 0V  
Channel to ambient  
VSD  
Source-drain voltage  
Thermal resistance  
–1.20  
62.5  
V
Rth (ch-a)  
trr  
°C/W  
ns  
IS = –2.1A, dis/dt = 50A/µ
Reverse recovery time  
100  
PERFORMANCE CURVES  
POWER DISSIPATION DERATING CURV
SAFE OPERATING AREA  
2.5  
2.0  
1.5  
1.0  
0.5  
0
tw =  
1ms  
–5  
–3  
–2  
10ms  
100ms  
–100  
–7  
–5  
–3  
–2  
Tc = 25°C  
Single Pulse  
–10–1  
–7  
DC  
–5  
–3  
–2  
–10–2  
0
200  
–10–2 –2–3 –5–7–101–2–3 –5–7–100 –2–3 –5–7–101 –2–3 –5–7–102  
CASE TC (°C)  
DRAIN-SOURCE VOLTAGE VDS (V)  
OUTPUT CHAACTERISTICS  
(TYPICAL)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
–50  
–40  
–30  
–20  
–10  
0
–20  
VGS =  
–10V  
–6V –5V  
VGS = –10V  
–8V  
Tc = 25°C  
Pulse Test  
–4V  
–5V  
–6V  
–8V  
–16  
–12  
–8  
–4  
0
–4V  
–3V  
Tc = 25°C  
Pulse Test  
–3V  
–2.5V  
PD = 2W  
PD = 2W  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
DRAIN-SOURCE VOLTAGE VDS (V)  
DRAIN-SOURCE VOLTAGE VDS (V)  
Sep.1998