2SK3212
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
(A)
10
Repetitive Avalanche Energy E
AR
(mJ)
10
I
AP
= 10 A
V
DD
= 50 V
duty < 0.1 %
Rg > 50
Ω
Reverse Drain Current I
DR
8
8
6
10 V
6
4
5V
V
GS
= 0, –5 V
4
2
2
0
25
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θ
ch – c(t) =
γ
s (t)
• θ
ch – c
θ
ch – c = 6.25°C/W, Tc = 25°C
PDM
D=
PW
T
0.03
0.02
1
0.0
PW
T
0.01
10
µ
1s
ho
u
tp
lse
100
µ
1m
10 m
100 m
1
10
Pulse Width
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
PW (S)
Avalanche Waveform
E
AR
=
1
2
•
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
I
D
Vin
15 V
50
Ω
0
V
DD
Rev.3.00 Sep 07, 2005 page 5 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
