2SK3212
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
500
Pulse Test
400
1, 2 A
300
5A
200
V
GS
= 4 V
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
50
20
Tc = –25°C
10
5
75°C
2
1
0.5
0.1
V
DS
= 10 V
Pulse Test
25°C
100
10 V
0
–40
0
40
80
5A
1, 2 A
120
160
0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
5000
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
2000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
1000
500
200
100
50
20
10
V
GS
= 0
f = 1 MHz
200
100
50
Ciss
Coss
Crss
20
10
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 5 A
V
DD
= 100 V
50 V
25 V
V
GS
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
500
300
200
160
16
Switching Time t (ns)
td(off)
100
tf
120
12
30
10
tr
80
8
td(on)
40
V
DD
= 100 V
50 V
25 V
4
V
DS
3
1
0.1
0
8
16
24
32
0
40
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
0.3
1
3
10
30 100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
