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2SK3212 参数 Datasheet PDF下载

2SK3212图片预览
型号: 2SK3212
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管电源开关
文件页数/大小: 8 页 / 94 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK3212
Main Characteristics
Power vs. Temperature Derating
40
100
50
10
PW
DC
Op
er
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
20
10
5
2
1
=1
0
ion
10
1
m
s(
0
µ
s
m
µ
s
s
t)
20
at
1s
ho
(T
10
0
50
100
150
200
25
Operation in
°
C
0.5
)
this area is
limited by R
DS(on)
0.2
Ta = 25°C
0.1
1
2
5 10 20
c=
50 100 200
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
10
Pulse Test
3.5 V
6V
6
4V
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
6
4
3V
4
Tc = 75°C
–25°C
25°C
2
V
GS
=2.5 V
2
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.5
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
500
Pulse Test
200
100
10 V
50
V
GS
= 4 V
2.0
1.5
1.0
I
D
= 5 A
2A
0
4
8
12
1A
16
20
0.5
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
20
10
0.1 0.2
0.5
1
2
5
10 20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 Sep 07, 2005 page 3 of 7