2SK1933
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
2.5
2.0
1.5
1.0
0.5
0
–40
Pulse Test
V
GS
= 10 V
I
D
= 5 A
2A
1A
50
20
10
5
2
1
0.5
0.1
Tc = 25°C
–25°C
75°C
Pulse Test
V
DS
= 20 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5000
10000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2000
1000
500
200
100
50
0.1
Ciss
1000
Coss
di/dt = 100 A/
µ
s, V
GS
= 0
Ta = 25°C
100
Crss
V
GS
= 0
f = 1 MHz
10
0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
V
GS
V
DD
= 250 V
400 V
600 V
V
DS
I
D
= 8 A
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
16
12
8
4
0
500
td(off)
1000
800
600
400
200
Switching Time t (ns)
200
100
50
20
10
5
0.2
V
GS
= 10 V, V
DD
= 30 V
PW = 5
µs,
duty
≤
1 %
tf
tr
td(on)
V
DD
= 250 V
400 V
600 V
40
80
120
160
200
0
0.5
1
2
5
10
20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Apr 27, 2006 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
