2SK1933
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
900
±30
10
30
10
150
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
900
±30
—
—
2.0
—
4.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.9
7
2620
830
320
30
140
285
170
0.9
1600
Max
—
—
±10
250
3.0
1.2
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 720 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V*
1
I
D
= 5 A, V
DS
= 20 V*
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Ω
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.3.00 Apr 27, 2006 page 2 of 6