2SK1880(L), 2SK1880(S)
Static Drain to Source on State
Resistance vs. Temperature
20
16
12
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
5
2
1
0.5
Pulse Test
V
DS
= 20 V
Tc = –25°C
I
D
= 1 A
8
75°C
0.2
0.1
0.05
0.02
0.5 A
4
25°C
–40
0
40
80
120
160
0.05 0.1
0.2
0.5
1
2
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time t rr (ns)
5000
2000
1000
500
200
100
50
0.1
1
0.2
0.5
1
2
5
10
0
10
1000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
di/dt = 100 A/
µ
s
V
GS
= 0
Ta = 25°C
Pulse Test
Ciss
100
V
GS
= 0
f = 1 MHz
Coss
10
Crss
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
1000
20
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
800
600
400
200
16
V
DD
= 100 V
250 V
400 V
V
DS
V
DD
= 100 V
250 V
400 V
4
8
12
16
Switching Time t (ns)
I
D
= 1.5 A
V
GS
200
100
50
tf
20
10
5
0.1
tr
td(on)
td(off)
12
8
4
0
20
0
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
