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2SK1880 参数 Datasheet PDF下载

2SK1880图片预览
型号: 2SK1880
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 8 页 / 85 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1880(L), 2SK1880(S)
Main Characteristics
Power vs. Temperature Derating
30
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
3
PW
20
1
O
ar pe
by ea rat
R is ion
li i
D
S
( mi n t
on ted his
)
DC
10
µ
10
s
0
µ
s
1
m
s
0.3
0.1
0.03
10
O
pe
ra
tio
n
=
10
s
m
(1
sh
)
ot
=
25
°
C
)
(T
c
Ta = 25°C
0.3
1
3
10
300
1000
0
50
100
150
0.01
0.1
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
2.0
Typical Transfer Characteristics
2.0
Drain Current I
D
(A)
5V
Drain Current I
D
(A)
1.6
1.2
0.8
0.4
Pulse Test
4.5 V
10 V
1.6
1.2
0.8
0.4
Pulse Test
V
DS
= 20 V
4V
V
GS
= 3.5 V
75°C
Tc = 25°C
–25°C
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
100
50
Drain to Source Saturation Voltage V
DS (on)
(V)
Pulse Test
16
12
8
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Pulse Test
I
D
= 1.5 A
20
10
5
V
GS
= 10 V
1A
0.5 A
2
1
0.05 0.1
0.2
0.5
1
2
5
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 7