2SK1808
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
10
8
10
5
VGS = 10 V
Pulse Test
–25°C
Tc = 25°C
75°C
2 A
ID = 5 A
2
1
6
4
0.5
1 A
2
0.2
0.1
VDS = 20 V
Pulse Test
0
0.05 0.1 0.2
0.5
1
2
5
–40
0
40
80
120
160
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10,000
1,000
5,000
VGS = 0
f = 1 MHz
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
2,000
1,000
500
Ciss
Coss
100
10
200
100
50
Crss
0.1 0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
1,000
800
600
400
200
500
•
VGS = 10 V VDD = 30 V
•
VDD = 250 V
400 V
PW = 2 µs, duty < 1%
16
12
200
100
50
td (off)
tf
600 V
ID = 5 A
VDS
VGS
tr
8
4
0
td (on)
20
10
5
600 V
400 V
VDD = 250 V
0
20
40
60
80
100
0.1 0.2
0.5
1
2
5
10
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
