2SK1161, 2SK1162
Static Drain to Source on State
Resistance vs. Temperature
2.0
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
V
DS
= 20 V
Pulse Test
–25°C
T
C
= 25°C
75°C
1.6
20
10
5
1.2
I
D
= 10 A
0.8
2, 5 A
2
1.0
0.5
0.1
0.4
0
–40
0
40
80
120
160
0.2
0.5
1.0
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5,000
5,000
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2,000
1,000
500
200
100
50
0.2
1,000
Ciss
Coss
100
10
5
0.5
1.0
2
5
10
20
0
10
20
Crss
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
20
500
Switching Characteristics
V
GS
= 10 V V
DD
= 30 V
PW = 2
µs,
duty < 1%
•
•
400
V
DS
300
V
DD
= 100 V
250 V
400 V
V
GS
16
Switching Time t (ns)
200
100
50
t
d (off)
12
t
f
t
r
t
d (on)
200
I
D
= 7 A
100
V
DD
= 400 V
250 V
100 V
8
16
24
32
40
8
20
10
5
0.2
4
0
0
0.5
1.0
2
5
10
20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
