2SK1161, 2SK1162
Main Characteristics
Power vs. Temperature Derating
120
100
30
Drain Current I
D
(A)
re
a
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
µ
s
0
µ
s
DS
80
10
3
1.0
0.3
0.1
O
is per
Lim at
ite ion
d in
by th
R is A
D
PW
C
O
pe
r
10
=
n)
1
10
m
s
C
(o
m
s
at
io
n
(1
40
(T
sh
ot
Ta = 25°C
1
3
10
25
°
C
)
2SK1162
2SK1161
=
)
0
50
100
150
30
100
300
1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
7V
6V
Pulse Test
12
5V
20
Typical Transfer Characteristics
–25°C
V
DS
= 20 V
Pulse Test
T
C
= 25°C
Drain Current I
D
(A)
Drain Current I
D
(A)
16
16
12
75°C
8
8
4
V
GS
= 4 V
0
10
20
30
40
50
4
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
10 A
6
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
V
GS
= 10 V
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
8
2
1.0
0.5
15 V
4
5A
2
I
D
= 2 A
0.2
0.1
0.05
0.5
0
4
8
12
16
20
1.0
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6