2SK1161, 2SK1162
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
2SK1161
2SK1162
V
GSS
I
D
I
D(pulse)
*
I
DR
2
Pch*
Tch
Tstg
1
Symbol
V
DSS
Ratings
450
500
±30
10
30
10
100
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SK1161
2SK1162
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
450
500
±30
—
—
2.0
—
—
4.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.6
0.7
7.0
1050
280
40
15
60
90
45
1.0
350
Max
—
—
±10
250
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
3
I
D
= 5 A, V
GS
= 10 V *
I
D
= 5 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Ω
3
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain 2SK1161
current
2SK1162
Gate to source cutoff voltage
Static drain to source on 2SK1161
state resistance
2SK1162
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
