2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain-Source on State Resistance
R
DS (on)
(Ω)
10
I
D
= 2 A
8
V
GS
= 10 V
Pulse Test
Forward Transfer Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
5
2
1.0
T
C
= 25°C
0.5
0.2
0.1
75°C
V
DS
= 20 V
Pulse Test
–25°C
6
1A
0.5 A
4
2
0
–40
0
40
80
120
160
0.05
0.1
0.2
0.5
1.0
2
5
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1,000
1,000
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
100
Coss
10
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
0.05
1
0
10
Capacitance C (pF)
Crss
0.1
0.2
0.5
1.0
2
5
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
20
100
Switching Characteristics
Gate to Source Voltage V
GS
(V)
V
GS
= 10 V V
DD
= 30 V
PW = 2
µs,
duty < 1%
•
•
Drain to Source Voltage V
DS
(V)
100 V
250 V
400
V
DS
400 V
16
50
Switching Time t (ns)
t
d (off)
20
t
f
10
5
t
d (on)
t
r
2
1
0.05
300
V
GS
200
V
DD
= 400 V
250 V
100 V
2
4
6
I
D
= 1.5 A
12
8
100
4
0
8
0
10
0.1
0.2
0.5
1.0
2
5
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
