2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK1151
2SK1152
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
450
500
±30
1.5
6
1.5
20
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown 2SK1151
voltage
2SK1152
Gate to source breakdown voltage
Gate to source leak current
2SK1151
Zero gate voltage drain
current
2SK1152
Gate to source cutoff voltage
2SK1151
Static drain to source on
state resistance
2SK1152
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
450
500
±30
—
—
2.0
—
—
0.6
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
3.5
4.0
1.1
160
45
5
5
10
20
10
1.0
220
Max
—
—
±10
100
3.0
5.5
6.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 1 A, V
GS
= 10 V *
3
I
D
= 1 A, V
DS
= 20 V *
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 1 A, V
GS
= 10 V,
R
L
= 30
Ω
I
F
= 1.5 A, V
GS
= 0
I
F
= 1.5 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
