2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Main Characteristics
Power vs. Temperature Derating
30
10
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
O
ar per
by ea at
R is ion
DS
lim in
(o
i t
n)
ted his
3
Drain Current I
D
(A)
10
0
D
µ
s
1
µ
s
PW
20
1.0
0.3
0.1
0.03
C
m
s
=
O
10
m
s
tio
ra
pe
(1
o
Sh
t)
=
25
(T
C
n
10
°
C
)
2SK1151
Ta = 25°C
0
50
100
150
0.01
1
10
2SK1152
100
1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
2.0
Pulse Test
15 V
2.0
5V
6V
10 V
4.5 V
1.2
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
1.6
1.6
V
DS
= 20 V
Pulse Test
1.2
0.8
4V
0.4
V
GS
= 3.5 V
0
4
8
12
16
20
0.8
75°C
0.4
T
C
= 25°C
0
2
4
6
8
10
–25°C
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
20
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
100
50
Pulse Test
V
GS
= 10 V
16
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
12
2A
8
1A
I
D
= 0.5 A
0
4
8
12
16
20
20
10
5
15 V
4
2
1
0.05
0.1
0.2
0.5
1.0
2
5
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
