2SJ484
Main Characteristics
Power vs. Temperature Derating
2.0
Maximum Safe Operation Area
–10
100
µs
–3
–1
Pch (W)
I
D
(A)
Test Condition:
When using the aluminum ceramic
board (12.5
×
20
×
70 mm)
1.5
PW
1
=
m
s
Channel Dissipation
Drain Current
D
C
–0.3
–0.1
–0.03
1.0
O
pe
(1 10
sh ms
ot
)
ra
0.5
Operation in
this area is
limited by R
DS (on)
tio
n
0
0
50
100
150
200
Ta = 25°C
–0.01
–1
–0.1 –0.3
–3
–10
–30
–100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–5
–10 V –6 V
–4 V
Pulse Test
–5
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
I
D
(A)
Drain Current
I
D
(A)
–4
–5 V
–4.5 V
–4
–3.5 V
–3
–3
Drain Current
–2
–3 V
–2
–1
V
GS
= –2.5 V
0
–2
–4
–6
–8
–10
–1
Tc = 75°C
25°C
–25°C
0
0
0
–1
–2
–3
–4
–5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
V
DS (on)
(V)
–1.0
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
–0.8
–0.6
0.5
V
GS
= –4 V
–10 V
–0.4
I
D
= –2 A
–1 A
–0.5 A
–0.2
0.2
0
0
–4
–8
–12
–16
–20
0.1
–0.1 –0.2 –0.5 –1
–2
–5
–10 –20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.3.00 Sep 07, 2005 page 3 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
