2SJ484
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
–30
±20
–2
–4
–2
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Pch
Tch
Note 2
Storage temperature
Tstg
Notes: 1. PW
≤
100
µs,
duty cycle
≤
10%
2. When using the aluminium ceramic board (12.5
×
20
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note:
3. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
DSS
I
GSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
–30
±20
—
—
–1.0
—
—
1.2
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.18
0.3
2.0
230
140
50
10
30
35
30
–0.95
60
Max
—
—
–10
±10
–2.0
0.23
0.45
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
DS
= –30 V, V
GS
= 0
V
GS
=
±16
V, V
DS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –1 A, V
GS
= –10 V
Note 3
I
D
= –1 A, V
GS
= –4 V
I
D
= –1 A, V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
V
GS
= –10 V
I
D
= –1 A
R
L
= 30
Ω
I
F
= –2 A, V
GS
= 0
I
F
= –2 A, V
GS
= 0
di
F
/dt = 50 A/µs
Note 3
Note 3
Rev.3.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
