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2SJ222 参数 Datasheet PDF下载

2SJ222图片预览
型号: 2SJ222
PDF下载: 下载PDF文件 查看货源
内容描述: 硅P沟道MOS场效应晶体管 [Silicon P Channel MOS FET]
分类和应用: 晶体晶体管场效应晶体管局域网
文件页数/大小: 7 页 / 82 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SJ222
Reverse Drain Current vs.
Source to Drain Voltage
–50
Reverse Drain Current I
DR
(A)
Pulse Test
–40
–30
–20
5 V
10 V
–10
V
GS
= 0, 5 V
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage
V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.0
1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 3.57°C/W, Tc = 25°C
P
DM
u
tp
lse
D=
PW
T
0.03
PW
T
0.01
10
µ
1s
ho
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin
Vin Monitor
D.U.T.
R
L
Vout
Monitor
10%
Waveform
90%
90%
90%
Vin
–10 V
50
V
DD
= –30 V
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 6