2SJ222
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
1.0
Pulse Test
0.8
100
30
10
3
1
0.3
0.1
–0.1 –0.3
Tc = 25°C
–25°C
Forward Transfer Admittance vs.
Drain Current
0.6
I
D
= –20 A
–5 A, –10 A
75°C
0.4
V
GS
= –4 V
0.2
–10 V
0
–40
0
40
–20 A
–5 A, –10 A
80
120
160
V
DS
= –10 V
Pulse Test
–1
–3
–10
–30
–100
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
Coss
300
100
30
10
Crss
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
5000
3000
1000
300
100
30
10
5
–0.1 –0.3
–1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
–3
–10
–30
–100
Capacitance C (pF)
Ciss
V
GS
= 0
f = 1 MHz
0
–10
–20
–30
–40
–50
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –10 V
–25 V
–50 V
V
DD
= –50 V
–25 V
–10 V
V
GS
Switching Characteristics
V
GS
(V)
0
5000
3000
V
GS
= –10 V, V
DD
= –30 V
PW = 2
µs,
duty
≤
1 %
td(off)
300
100
30
10
5
–0.1 –0.3
–1
–3
–10
–30
–100
tf
tr
0
–20
–4
Switching Time t (ns)
1000
Drain to Source Voltage
–40
V
DS
–60
–8
–12
Gate to Source Voltage
–80
I
D
= –20 A
–100
0
20
40
60
80
–16
td(on)
–20
100
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
