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2SJ222 参数 Datasheet PDF下载

2SJ222图片预览
型号: 2SJ222
PDF下载: 下载PDF文件 查看货源
内容描述: 硅P沟道MOS场效应晶体管 [Silicon P Channel MOS FET]
分类和应用: 晶体晶体管场效应晶体管局域网
文件页数/大小: 7 页 / 82 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SJ222
Main Characteristics
Power vs. Temperature Derating
60
–100
Maximum Safe Operation Area
µ
s
)
µ
s
ot
)
10
0
sh
s
°C
1
10
m
25
s(
1
m
c=
(T
10
n
=
tio
ra
pe
O
Pch (W)
I
D
(A)
–30
–10
–3
–1
–0.3
PW
40
DC
Channel Dissipation
20
Drain Current
Operation in
this area is
limited by R
DS (on)
0
0
50
100
150
Ta = 25°C
–0.1
–1
–3
–10
–30
–100 –300 –1000
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
–50
–10 V
–8 V
–6 V
–20
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
I
D
(A)
–40
I
D
(A)
Drain Current
–5 V
–16
–30
–12
–4 V
Drain Current
–20
V
GS
= –3 V
Pulse Test
0
0
–4
–8
–12
–16
–20
–8
–10
–4
75°C
Tc = 25°C
–25°C
0
0
–1
–2
–3
–4
–5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–10
Pulse Test
–8
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
5
3
1
0.3
0.1
Pulse Test
–6
V
GS
= –4 V
–10 V
–4
–20 A
–2
–10 A
I
D
= –5 A
0
0
–4
–8
–12
–16
–20
0.03
0.01
0.005
–0.1 –0.3
–1
–3
–10
–30
100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6