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2SC3355 参数 Datasheet PDF下载

2SC3355图片预览
型号: 2SC3355
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延硅晶体管RF高频低噪声放大 [NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION]
分类和应用: 晶体晶体管
文件页数/大小: 10 页 / 242 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SC3355
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
Noise Figure NF (dB)
3rd Order Intermodulation Distortion IM
3
(dB)
2nd Order Intermodulation Distortion IM
2
(dB)
IM
3
, IM
2
vs. COLLECTOR CURRENT
–100
–90
–80
–70
–60
–50
–40
–30
20
30
40
50
60
70
V
CE
= 10 V
V
o
= 100 dB
µ
V/50
R
g
= R
e
= 50
IM
2
: f = 90 + 100 MHz
IM
3
: f = 2 × 200 – 190 MHz
V
CE
= 10 V
f = 1 GHz
5
4
3
2
1
0
0.5
1
5
10
50 70
IM
3
IM
2
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
[Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10208EJ01V0DS