DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3355
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
FEATURES
• Low noise and high gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP. @ V
CE
= 10 V, I
C
= 40 mA, f = 1 GHz
• High power gain : MAG = 11 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
2SC3355
2SC3355-T
Quantity
500 pcs (Non reel)
2.5 kpcs/box (Box type)
Supplying Form
• 18 mm wide radial taping
• Supplying paper tape with in a box
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 500 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
12
3.0
100
600
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10208EJ01V0DS (1st edition)
(Previous No. P10355EJ3V1DS00)
Date Published April 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 1985, 2003
RENESAS [ RENESAS TECHNOLOGY CORP ]
