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24501BVA 参数 Datasheet PDF下载

24501BVA图片预览
型号: 24501BVA
PDF下载: 下载PDF文件 查看货源
内容描述: [4KX1 STANDARD SRAM, 120ns, CDIP18]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 8 页 / 92 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HM-6504  
Timing Waveforms (Continued)  
(7)  
(8)  
(7)  
TAVEL TELAX  
TAVEL  
NEXT ADD  
A
ADD VALID  
(18) TELEL  
(5) TELEH  
(6)  
TEHEL  
(6) TEHEL  
E
(11)  
TWLEL  
(11)  
(13)  
TWLEL TELWH  
W
(15)  
(17)  
(15)  
TDVEL TELDX  
TDVEL  
D
0
DATA VALID  
NEXT DATA  
HIGH-Z  
HIGH-Z  
TIME  
REFERENCE  
-1  
0
1
2
3
4
FIGURE 12. EARLY WRITE CYCLE  
TRUTH TABLE  
INPUTS  
OUTPUT  
TIME REFERENCE  
E
W
X
L
A
X
V
X
X
X
V
D
X
V
X
X
X
V
Q
Z
Z
Z
Z
Z
Z
FUNCTION  
-1  
0
1
2
3
4
H
Memory Disabled  
Cycle Begins, Addresses are Latched  
Write in Progress Internally  
L
X
X
X
L
Write Completed  
H
Prepare for Next Cycle (Same as - 1)  
Cycle Ends, Next Cycle Begins (Same as 0)  
The early write cycle is the only cycle where the output is  
guaranteed not to become active. On the falling edge of E  
(T = 0), the addresses, the write signal, and the data input  
are latched in on-chip registers. The logic value of W at the  
time E falls, determines the state of the output buffer for that  
cycle. Since W is low when E falls, the output buffer is  
latched into the high impedance state and will remain in that  
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