HM-6504
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to V +0.3V
Thermal Resistance (Typical)
CERDIP Package . . . . . . . . . . . . . . . . 75 C/W
PDIP Package . . . . . . . . . . . . . . . . . . . 75 C/W
CLCC Package . . . . . . . . . . . . . . . . . . 90 C/W
Maximum Storage Temperature Range . . . . . . . . .-65 C to +150 C
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
Plastic Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300 C
θ
θ
JC
15 C/W
JA
o
o
CC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
o
N/A
o
o
33 C/W
o
o
o
o
o
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6910 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-6504S-9, HM-6504B-9, HM-6504-9 . . . . . . . .-40 C to +85 C
HM-6504B-8, HM-6504-8 . . . . . . . . . . . . . . . . . .-55 C to +125 C
o
o
o
o
o
o
DC Electrical Specifications V = 5V ±10%; T = -40 C to +85 C (HM-6504B-9, HM-6504-9)
CC
A
o
o
T
= -55 C to +125 C (HM-6504B-8, HM-6504-8)
A
SYMBOL
PARAMETER
MIN
MAX
25
UNITS
µA
TEST CONDITIONS
ICCSB
Standby Supply Current
HM-6504-9
HM-6504-8
-
-
-
IO = 0mA, E = V -0.3V,
CC
V
= 5.5V
CC
50
µA
ICCOP
ICCDR
Operating Supply
Current (Note 1)
7
mA
E = 1MHz, IO = 0mA, VI = GND,
= 5.5V
V
CC
Data Retention Supply
Current
HM-6504-9
HM-6504-8
-
15
25
µA
µA
V
IO = 0mA, V
= 2.0V, E = V
CC
CC
-
VCCDR
II
Data Retention Supply Voltage
Input Leakage Current
Output Leakage Current
Input Low Voltage
2.0
-1.0
-1.0
-0.3
-
+1.0
+1.0
0.8
µA
µA
V
VI = V
or GND, V
= 5.5V
CC
CC
IOZ
VO = V
or GND, V
= 5.5V
CC
CC
VIL
V
V
= 4.5V
= 5.5V
CC
CC
VIH
Input High Voltage
V
V
-2.0
V
+0.3
CC
V
CC
VOL
VOH1
VOH2
Output Low Voltage
-
0.4
V
IO = 2.0mA, V
CC
= 4.5V
= 4.5V
Output High Voltage
2.4
-
-
V
IO = -1.0mA, V
CC
CC
Output High Voltage (Note 2)
-0.4
V
IO = -100µA, V
= 4.5V
CC
o
Capacitance T = +25 C
A
SYMBOL
PARAMETER
MAX
8
UNITS
TEST CONDITIONS
CI
Input Capacitance (Note 2)
Output Capacitance (Note 2)
pF
pF
f = 1MHz, All measurements are
referenced to device GND
CO
10
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
128
RENESAS [ RENESAS TECHNOLOGY CORP ]
