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SS2625B-6 参数 Datasheet PDF下载

SS2625B-6图片预览
型号: SS2625B-6
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 2MX36, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 30 页 / 218 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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72Mbit Pipelined BSRAM  
w/ NoBL Architecture  
2Mx36  
Preliminary Data Sheet  
Scan Register Sizes  
Register Name  
Instruction  
Bypass  
Bit Size  
3
1
ID  
32  
70  
Boundary Scan  
Instruction Codes  
Instruction  
EXTEST  
Code  
000  
Description  
Captures the input/output states. Places the Boundary Scan register  
between TDI and TDO. Forces all SRAM outputs to high-Z state. This  
instruction is not 1149.1 compliant.  
IDCODE  
001  
010  
Loads the ID register with the vendor ID code and places the register  
between TDI and TDO. This operation does not affect SRAM operation.  
SAMPLE Z  
Captures the input/output states. Places the Boundary Scan register  
between TDI and TDO. Forces all SRAM output drivers to a high-Z state  
RESERVED  
011  
100  
Do Not Use: This instruction id reserved for future use.  
SAMPLE/PRELOAD  
Captures the input/output states. Places the Boundary Scan register  
between TDI and TDO. Does not affect SRAM operation. This instruction  
does not implement the 1149.1 preload function and is therefore not  
1149.1 compliant  
RESERVED  
RESERVED  
BYPASS  
101  
110  
111  
Do Not Use: This instruction id reserved for future use.  
Do Not Use: This instruction id reserved for future use.  
Places the Bypass register between TDI and TDO. Does not affect  
SRAM operation.  
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921  
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com  
Copyright 2001 Enhanced Memory Systems. All rights reserved.  
The information contained herein is subject to change without notice.  
Page 26 of 30  
Revision 1.0  
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