64Mbit – High Speed SDRAM
8Mx8, 4Mx16 HSDRAM
Electrical Characteristics
Absolute Maximum Ratings
Description
Power Supply Voltage
Voltage on any Pin with Respect to Ground
Operating Temperature (ambient)
Storage Temperature
Power Dissipation
DC Output Current (I/O pins)
Symbol
V
DD
V
IN
, V
OUT
T
A
T
stg
P
D
I
OUT
Value
-1V to +4.6V
-0.5V to +4.6V
0°C to +70°C
-55°C to +125°C
1.0 W
50mA
Data Sheet
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only, and the functional operation of the device at these, or any other conditions above those listed in the
operational section of the specification, is not implied. Exposure to conditions at absolute maximum ratings for extended
periods may affect device reliability.
DC Operating Conditions (T
A
= 0°C to 70°C)
Symbol
V
DD
V
IH
V
IL
I
I(L)
I
O(L)
V
OH
V
OL
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage (I
OUT
= -4mA)
Output Low Voltage (I
OUT
= +4mA)
Parameter
Min
3.135
2.0
-0.3
-
-
2.4
0.0
Typical
3.3
3.3
0.0
-
-
-
-
Max
3.465
V
DD
+ 0.3
0.8
±1
±1
V
DD
0.4
Units
V
V
V
µA
µA
V
V
Notes
Capacitance (T
A
= 25°C, f = 1MHz, VDD = 3.3V
±
5%, not 100% tested)
Symbol
C
In1
C
In2
C
I/O
Parameter
Input Capacitance (BA1, BA0, A0-11)
Input Capacitance (all control inputs)
I/O Capacitance (DQ0-15)
Min
2.5
2.5
3.5
Typical
3.3
3.3
4.5
Max
4.0
4.0
5.5
Units
pF
pF
pF
Notes
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095;
http://www.edram.com
1999 Enhanced Memory Systems. All rights reserved.
The information contained herein is subject to change without notice.
Page 4 of 10
Revision 1.1
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
