64Mbit – Enhanced SDRAM
8Mx8, 4Mx16 ESDRAM
Preliminary Datasheet
No Write Transfer Mode (CL = 1, BL = 4)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLK
tRCD
tRP
tRCD
tRP
tRAS
tRC
CS#
RAS#
CAS#
WE#
B0
R0
R0
R0
B0
C0
B0
R1
R1
R1
B0
C8
B0
B0
BA(1:0)
A11, A9
A10/AP
A(8:0)
DQM
C4
C12
D12
Q0
Q1
Q2
Q3
D8
D9
D10
D11
Q4
Q5
Q6
Q7
D13
D14
DQ
Internal Status
Bank 0
Active
Pre
Idle
Active
R0
Cache 0
The ESDRAM device provides a unique capability. Within the same bank, a row can be cached and a subsequent write to
a different row can be performed while keeping the read cache intact. Two burst reads from row 0 and two burst writes to
row 1 are shown.
This is a product in sampling or pre-production phase of development. Charac-
teristic data and other specifications are subject to change without notice.
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com
Page 26 of 33
Revision 1.1
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
