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SM2603T-10 参数 Datasheet PDF下载

SM2603T-10图片预览
型号: SM2603T-10
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM, 8MX8, 4.7ns, CMOS, PDSO54]
分类和应用: 时钟动态存储器光电二极管
文件页数/大小: 33 页 / 288 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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64Mbit – Enhanced SDRAM  
8Mx8, 4Mx16 ESDRAM  
Preliminary Datasheet  
Burst Termination (BL = 4)  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CLK  
CS#  
RAS#  
CAS#  
WE#  
B0  
R0  
R0  
R0  
B0  
C0  
B0  
B0  
C4  
B1  
B0  
BA(1:0)  
A11, A9  
A10/AP  
A(8:0)  
C8  
Q7  
DQM  
Q0  
Q1  
Q0  
Q4  
Q5  
Q4  
Q6  
Q7  
Q8  
Q9  
Q10  
DQ (CL1)  
DQ (CL2)  
Q1  
Q5  
Q6  
Q8  
Q9  
Q10  
Internal Status  
Bank 0  
Active  
Precharge  
Idle  
Active  
Precharge  
Idle  
Bank 1  
For burst reads, the Precharge and Burst Termination commands hi-Z the DQ bus in CL clock cycles. A single bank Pre-  
Charge command to a bank that is not bursting pre-charges that bank, but does not terminate the other bank’s burst. For  
burst writes, the Precharge and Burst Termination commands terminate the burst in the same clock cycle in which the  
command is registered by the ESDRAM.  
This is a product in sampling or pre-production phase of development. Charac-  
teristic data and other specifications are subject to change without notice.  
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921  
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com  
Page 28 of 33  
Revision 1.1  
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