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FM25CL64B 参数 Datasheet PDF下载

FM25CL64B图片预览
型号: FM25CL64B
PDF下载: 下载PDF文件 查看货源
内容描述: 64Kb的串行3V F-RAM存储器 [64Kb Serial 3V F-RAM Memory]
分类和应用: 存储
文件页数/大小: 14 页 / 302 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM25CL64B - 64Kb 3V SPI F-RAM  
WRSR – Write Status Register  
RDSR - Read Status Register  
The RDSR command allows the bus master to verify  
the contents of the Status Register. Reading Status  
provides information about the current state of the  
write protection features. Following the RDSR op-  
code, the FM25CL64B will return one byte with the  
contents of the Status Register. The Status Register is  
described in detail in a later section.  
The WRSR command allows the user to select  
certain write protection features by writing a byte to  
the Status Register. Prior to issuing a WRSR  
command, the /WP pin must be high or inactive. Note  
that on the FM25CL64B, /WP only prevents writing  
to the Status Register, not the memory array. Prior to  
sending the WRSR command, the user must send a  
WREN command to enable writes. Note that  
executing a WRSR command is a write operation and  
therefore clears the Write Enable Latch.  
Figure 7. RDSR Bus Configuration  
Figure 8. WRSR Bus Configuration (WREN not shown)  
yellow). The WEL flag indicates the state of the  
Status Register & Write Protection  
Write Enable Latch. Attempting to directly write the  
WEL bit in the Status Register has no effect on its  
state. This bit is internally set and cleared via the  
WREN and WRDI commands, respectively.  
The write protection features of the FM25CL64B are  
multi-tiered. First, a WREN op-code must be issued  
prior to any write operation. Assuming that writes are  
enabled using WREN, writes to memory are  
controlled by the Status Register. As described  
above, writes to the Status Register are performed  
using the WRSR command and subject to the /WP  
pin. The Status Register is organized as follows.  
BP1 and BP0 are memory block write protection bits.  
They specify portions of memory that are write-  
protected as shown in the following table.  
Table 3. Block Memory Write Protection  
Table 2. Status Register  
BP1  
BP0 Protected Address Range  
Bit  
7
6
0
5
0
4
0
3
BP1  
2
BP0  
1
0
0
0
0
1
1
0
1
0
1
None  
Name WPEN  
WEL  
1800h to 1FFFh (upper ¼)  
1000h to 1FFFh (upper ½)  
0000h to 1FFFh (all)  
Bits 0 and 4-6 are fixed at 0 and cannot be modified.  
Note that bit  
0 (“Ready” in EEPROMs) is  
unnecessary as the F-RAM writes in real-time and is  
never busy. The WPEN, BP1 and BP0 control write  
protection features. They are nonvolatile (shaded  
Rev. 1.2  
Feb. 2011  
Page 6 of 14  
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