Internet Data Sheet
HYS72T[64/128/256]xx0HR–[3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
3.3
Timing Characteristics
This chapter describes the AC characteristics tables.
3.3.1
Speed Grades Definitions
Speed Grade Definitions for: DDR2–667 (Table 12), DDR2–533C (Table 13) and DDR2–400B (Table 14)
TABLE 12
Speed Grade Definition Speed Bins for DDR2–667
Speed Grade
DDR2–667C
DDR2–667D
Unit
Note
QAG Sort Name
CAS-RCD-RP latencies
–3
–3S
4–4–4
5–5–5
tCK
Parameter
Symbol
Min.
Max.
Min.
Max.
—
1)2)3)4)
1)2)3)4)
1)2)3)4)
1)2)3)4)5)
1)2)3)4)
1)2)3)4)
1)2)3)4)
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
tCK
5
8
5
8
ns
ns
ns
ns
ns
ns
ns
tCK
3
8
3.75
3
8
tCK
3
8
8
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
tRAS
tRC
tRCD
tRP
45
57
12
12
70000
—
45
60
15
15
70000
—
—
—
—
—
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0) .
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT
.
5) RAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI
t
.
TABLE 13
Speed Grade Definition Speed Bins for DDR2–533C
Speed Grade
DDR2–533C
Unit
Note
QAG Sort Name
CAS-RCD-RP latencies
–3.7
4–4–4
tCK
Parameter
Symbol
Min.
Max.
—
1)2)3)4)
1)2)3)4)
1)2)3)4)
1)2)3)4)5)
1)2)3)4)
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
tCK
tCK
tCK
tRAS
tRC
5
8
ns
ns
ns
ns
ns
3.75
3.75
45
8
8
Row Active Time
Row Cycle Time
70000
—
60
Rev. 1.31, 2006-11
17
03292006-21GC-MK06