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HYS64D32020HDL-6-C 参数 Datasheet PDF下载

HYS64D32020HDL-6-C图片预览
型号: HYS64D32020HDL-6-C
PDF下载: 下载PDF文件 查看货源
内容描述: 200针的小型双列直插式内存模块 [200-Pin Small Outline Dual-In-Line Memory Modules]
分类和应用: 存储动态存储器
文件页数/大小: 34 页 / 1787 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS64D[32/16]0x0[G/H]DL–[5/6]–C  
Small-Outline DDR SDRAM Modules  
10) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.  
11) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge. A valid transition  
is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the  
bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from  
HIGH to LOW at this time, depending on tDQSS  
.
12) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system  
performance (bus turnaround) degrades accordingly.  
Rev. 1.31, 2006-09  
19  
03292006-VN6D-DETI  
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