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HYE18L128160BC-7.5 参数 Datasheet PDF下载

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型号: HYE18L128160BC-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用128兆移动-RAM [DRAMs for Mobile Applications 128-Mbit Mobile-RAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 55 页 / 1522 K
品牌: QIMONDA [ QIMONDA AG ]
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HY[B/E]18L128160B[C/F]-7.5  
128-Mbit Mobile-RAM  
Electrical CharacteristicsPull-up and Pull-down Characteristics  
Table 23  
Self Refresh Currents1)2)  
Parameter & Test Conditions  
Max.  
Symbol  
Values  
Unit  
Temperature  
typ.  
max.  
Self Refresh Current:  
Self refresh mode,  
full array activation  
(PASR = 000)  
85 °C  
70 °C  
45 °C  
25 °C  
85 °C  
70 °C  
45 °C  
25 °C  
85 °C  
70 °C  
45 °C  
25 °C  
IDD6  
400  
285  
200  
180  
340  
250  
185  
170  
310  
240  
175  
165  
470  
µA  
Self Refresh Current:  
Self refresh mode,  
half array activation  
(PASR = 001)  
400  
Self Refresh Current:  
Self refresh mode,  
quarter array activation  
(PASR = 010)  
360  
1) 0 °C TC 70 °C (comm.); -25 °C TC 85 °C (ext.); VDD = VDDQ = 1.70V to 1.95V  
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual  
temperature with a much finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for  
TCSR. At production test the sensor is calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained  
from device characterization.  
3.4  
Pull-up and Pull-down Characteristics  
Table 24  
Half Drive Strength and Full Drive Strength  
Half Drive Strength  
Voltage  
(V)  
Full Drive Strength  
Pull-Down Current  
(mA)  
Pull-Up Current (mA)  
Pull-Down Current  
(mA)  
Pull-Up Current (mA)  
Nominal  
Low  
Nominal  
High  
Nominal  
Low  
Nominal  
High  
Nominal  
Low  
Nominal  
High  
Nominal  
Low  
Nominal  
High  
0.00  
0.40  
0.65  
0.85  
1.00  
1.40  
1.50  
1.65  
1.80  
1.95  
0.0  
0.0  
-19.7  
-18.8  
-18.2  
-17.6  
-16.7  
-9.4  
-33.4  
-32.0  
-31.0  
-29.9  
-28.7  
-20.4  
-17.1  
-11.4  
-4.8  
0.0  
0.0  
-39.3  
-37.6  
-36.4  
-35.1  
-33.3  
-18.8  
-13.2  
-3.5  
-66.7  
-63.9  
-61.9  
-59.8  
-57.3  
-40.7  
-34.1  
-22.7  
-9.6  
15.1  
20.3  
22.0  
22.6  
23.5  
23.6  
23.8  
23.9  
24.0  
20.5  
28.5  
32.0  
33.5  
35.0  
35.3  
35.5  
35.7  
35.9  
30.2  
40.5  
43.9  
45.2  
46.9  
47.2  
47.5  
47.7  
48.0  
41.0  
57.0  
64.0  
67.0  
70.0  
70.5  
71.0  
71.4  
71.8  
-6.6  
-1.8  
3.8  
7.5  
9.8  
2.5  
19.6  
5.0  
The above characteristics are specified under nominal process variation / condition  
Temperature (Tj): Nominal = 50 °C, VDDQ: Nominal = 1.80 V  
Data Sheet  
49  
Rev. 1.71, 2007-01  
05282004-NZNK-8T0D  
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