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HYB25DC128160CE-6 参数 Datasheet PDF下载

HYB25DC128160CE-6图片预览
型号: HYB25DC128160CE-6
PDF下载: 下载PDF文件 查看货源
内容描述: 128 - Mbit的双数据速率SDRAM [128-Mbit Double-Data-Rate SDRAM]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率
文件页数/大小: 32 页 / 1836 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25DC128[800/160]C[E/F]  
128-Mbit Double-Data-Rate SDRAM  
4.3  
IDD Current Measurement Conditions  
Legend: A = Activate, R = Read, RA = Read with Autoprecharge, P = Precharge, N = NOP or DESELECT  
I
DD1: Operating Current: One Bank Operation  
1. General test condition  
a) Only one bank is accessed with tRC,MIN  
.
b) Burst Mode, Address and Control inputs are changing once per NOP and DESELECT cycle.  
c) 50% of data changing at every transfer  
d) IOUT = 0 mA.  
2. Timing patterns  
a) DDR266A (133 MHz, CL = 2): tCK = 7.5 ns, BL = 4, tRCD = 3 × tCK, tRC = 9 × tCK, tRAS = 5 × tCK  
Setup: A0 N N R0 N P0 N N N Read: A0 N N R0 N P0 N NN - repeat the same timing with random address changing  
b) DDR333B (166 MHz, CL = 2.5): tCK = 6 ns, BL = 4, = 3 × tCK, tRC = 10 × tCK, tRAS = 7 × tCK  
Setup: A0 N N R0 N N N P0 N N Read: A0 N N R0 N N N P0 N N - repeat the same timing with random address changing  
c) DDR400B (200 MHz, CL = 3): tCK = 5 ns, BL = 4, tRCD = 3 × tCK, tRC = 11 × tCK, tRAS = 8 × tCK  
Setup:A0 N N R0 N N N N P0 N N Read: A0 N N R0 N N N N P0 N N -repeat the same timing with random address  
changing  
I
DD7: Operating Current: Four Bank Operation  
1. General test condition  
a) Four banks are being interleaved with tRCMIN  
.
b) Burst Mode, Address and Control inputs on NOP edge are not changing.  
c) 50% of data changing at every transfer  
d) IOUT = 0 mA.  
2. Timing patterns  
a) DDR266A (133 MHz, CL = 2): tCK = 7.5 ns, BL = 4, tRRD = 2 × tCK, tRCD = 3 × tCK, tRAS = 5 × tCK  
Setup: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 Read: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 - repeat the same timing with  
random address changing  
b) DDR333B (166 MHz, CL = 2.5): tCK = 6 ns, BL = 4, tRRD = 2 × tCK, tRCD = 3 × tCK, tRAS = 5 × tCK  
Setup: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 Read: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 - repeat the same timing with  
random address changing  
c) DDR400B (200 MHz, CL = 3): tCK = 5 ns, BL = 4, tRRD = 2 × tCK, tRCD = 3 *× tCK, tRAS = 8 × tCK  
Setup: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N Read: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N - repeat the same timing  
with random address  
Rev. 1.1, 2007-01  
26  
03062006-JXUK-E7R1  
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