欢迎访问ic37.com |
会员登录 免费注册
发布采购

HYB25D256800BCL-7F 参数 Datasheet PDF下载

HYB25D256800BCL-7F图片预览
型号: HYB25D256800BCL-7F
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第3页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第4页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第5页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第6页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第8页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第9页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第10页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第11页  
HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Overview  
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver.  
DQS is a strobe transmitted by the DDR SDRAM during Reads and by the memory controller during Writes. DQS  
is edge-aligned with data for Reads and center-aligned with data for Writes.  
The 256Mb DDR SDRAM operates from a differential clock (CK and CK; the crossing of CK going HIGH and CK  
going LOW is referred to as the positive edge of CK). Commands (address and control signals) are registered at  
every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both  
edges of DQS, as well as to both edges of CK.  
Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and  
continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration  
of an Active command, which is then followed by a Read or Write command. The address bits registered  
coincident with the Active command are used to select the bank and row to be accessed. The address bits  
registered coincident with the Read or Write command are used to select the bank and the starting column location  
for the burst access.  
The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4 or 8 locations. An Auto  
Precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst  
access.  
As with standard SDRAMs, the pipelined, multibank architecture of DDR SDRAMs allows for concurrent operation,  
thereby providing high effective bandwidth by hiding row precharge and activation time.  
An auto refresh mode is provided along with a power-saving power-down mode. All inputs are compatible with the  
JEDEC Standard for SSTL_2. All outputs are SSTL_2, Class II compatible.  
Note:The functionality described and the timing specifications included in this data sheet are for the DLL Enabled  
mode of operation.  
Data Sheet  
7
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW