欢迎访问ic37.com |
会员登录 免费注册
发布采购

HYB25D256800BCL-7F 参数 Datasheet PDF下载

HYB25D256800BCL-7F图片预览
型号: HYB25D256800BCL-7F
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第2页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第3页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第4页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第5页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第7页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第8页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第9页浏览型号HYB25D256800BCL-7F的Datasheet PDF文件第10页  
256 Mbit Double Data Rate SDRAM  
DDR SDRAM  
HYB25D256400B[T/C](L)  
HYB25D256800B[T/C](L)  
HYB25D256160B[T/C](L)  
1
Overview  
1.1  
Features  
Double data rate architecture: two data transfers per clock cycle.  
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the  
receiver.  
DQS is edge-aligned with data for reads and is center-aligned with data for writes  
Differential clock inputs (CK and CK)  
Four internal banks for concurrent operation  
Data mask (DM) for write data  
DLL aligns DQ and DQS transitions with CK transitions  
Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS  
Burst Lengths: 2, 4, or 8  
CAS Latency: 2, 2.5, 3  
Auto Precharge option for each burst access  
Auto Refresh and Self Refresh Modes  
7.8 µs Maximum Average Periodic Refresh Interval (8K refresh)  
2.5V (SSTL_2 compatible) I/O  
VDDQ = 2.5 V ± 0.2 V (DDR200, DDR266, DDR333); VDDQ = 2.6 V ± 0.1 V (DDR400)  
VDD = 2.5 V ± 0.2 V (DDR200, DDR266, DDR333); VDD = 2.6 V ± 0.1 V (DDR400)  
P-TSOPII-66-1 package  
P-TFBGA-60-2 package with 3 depopulated rows (12 mm × 8 mm2).  
Table 1  
Performance  
Part Number Speed Code  
-5  
6  
-7F  
–7  
8  
Unit  
Speed Grade  
Component  
DDR400B DDR333B DDR266 DDR266A DDR200  
Module  
PC3200-  
3033  
PC2700–  
2533  
PC2100- PC2100-  
PC1600-  
2022  
2022  
2033  
max. Clock Frequency  
@CL3  
fCK3 200  
166  
166  
133  
MHz  
MHz  
MHz  
@CL2.5 fCK2.5 166  
@CL2 fCK2 133  
143  
133  
143  
133  
125  
100  
Table 2  
1.2  
Description  
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits.  
It is internally configured as a quad-bank DRAM.  
The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data  
rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per  
clock cycle at the I/O pins. A single read or write access for the 256Mb DDR SDRAM effectively consists of a single  
2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-  
clock-cycle data transfers at the I/O pins.  
Data Sheet  
6
Rev. 1.21, 2004-07