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HYB25D256400BTL-6 参数 Datasheet PDF下载

HYB25D256400BTL-6图片预览
型号: HYB25D256400BTL-6
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Functional Description  
3.5.4  
Precharge  
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The  
bank(s) will be available for a subsequent row access some specified time (tRP) after the Precharge command is  
issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank  
is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are  
treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any  
Read or Write commands being issued to that bank.  
CK  
CK  
HIGH  
CKE  
CS  
RAS  
CAS  
WE  
A0-A9, A11, A12  
All Banks  
A10  
One Bank  
BA  
BA0, BA1  
BA = bank address  
(if A10 is Low, otherwise Don’t Care).  
Don’t Care  
Figure 30 Precharge Command  
Data Sheet  
47  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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