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HYB25D256400BCL-7 参数 Datasheet PDF下载

HYB25D256400BCL-7图片预览
型号: HYB25D256400BCL-7
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Functional Description  
3.5.5  
Power-Down  
Power-down is entered when CKE is registered LOW (no accesses can be in progress). If power-down occurs  
when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a  
row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input  
and output buffers, excluding CK, CK and CKE. The DLL is still running in Power Down mode, so for maximum  
power savings, the user has the option of disabling the DLL prior to entering Power-down. In that case, the DLL  
must be enabled after exiting power-down, and 200 clock cycles must occur before a Read command can be  
issued. In power-down mode, CKE Low and a stable clock signal must be maintained at the inputs of the DDR  
SDRAM, and all other input signals are “Don’t Care”. However, power-down duration is limited by the refresh  
requirements of the device, so in most applications, the self refresh mode is preferred over the DLL-disabled  
power-down mode.  
The power-down state is synchronously exited when CKE is registered HIGH (along with a Nop or Deselect  
command). A valid, executable command may be applied one clock cycle later.  
CK  
CK  
tIS  
tIS  
CKE  
Command  
VALID  
NOP  
VALID  
NOP  
No column  
access in  
progress  
Exit  
power down  
mode  
Don’t Care  
Enter Power Down mode  
(Burst Read or Write operation  
must not be in progress)  
Figure 31 Power Down  
Data Sheet  
48  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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