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HYB25D256400BCL-7 参数 Datasheet PDF下载

HYB25D256400BCL-7图片预览
型号: HYB25D256400BCL-7
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Functional Description  
Maximum DQSS  
T1  
T2  
T3  
T4  
T5  
T6  
CK  
CK  
Write  
NOP  
NOP  
NOP  
NOP  
PRE  
Command  
tWR  
BA (a or all)  
BA a, COL b  
Address  
tRP  
tDQSS (max)  
DQS  
DQ  
DI a-b  
DM  
Minimum DQSS  
T1  
T2  
T3  
T4  
T5  
T6  
CK  
CK  
Write  
NOP  
NOP  
NOP  
NOP  
tWR  
PRE  
Command  
BA (a or all)  
BA a, COL b  
Address  
tRP  
tDQSS (min)  
DQS  
DQ  
DI a-b  
DM  
DI a-b = data in for bank a, column b.  
3 subsequent elements of data in are applied in the programmed order following DI a-b.  
A non-interrupted burst is shown.  
tWR is referenced from the first positive CK edge after the last data in pair.  
Don’t Care  
A10 is Low with the Write command (Auto Precharge is disabled).  
Figure 26 Write to Precharge: Non-Interrupting (Burst Length = 4)  
Data Sheet  
43  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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